high interfacial quality metal oxide semiconductor

Development of High-Quality Gate Oxide on 4H-SiC Using

A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O) inert (Ar) and reducing (H2 N2) ambients at elevated temperatures from 900°C to 1300°C for 1 hour. Ultrathin Hf O 2 (equivalent oxide thickness = 1.1 nm ) metal-oxide-semiconductor capacitors on nGa As substrate with germanium passivation Appl. Phys. Lett. 88 252906 (2006) 10.1063/1. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer

Improved interfacial and electrical properties of GaAs

Ultrathin Hf O 2 (equivalent oxide thickness = 1.1 nm ) metal-oxide-semiconductor capacitors on nGa As substrate with germanium passivation Appl. Phys. Lett. 88 252906 (2006) 10.1063/1. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O) inert (Ar) and reducing (H2 N2) ambients at elevated temperatures from 900°C to 1300°C for 1 hour.

High interfacial quality metal-oxide-semiconductor

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al 2O 3 interlayer and its internal charge analysis Ryusei Oka1 Keisuke Yamamoto1 Hiroshi Akamine1 Dong Wang1 Hiroshi Nakashima2 Shigeomi Hishiki3 and Keisuke Kawamura2 3 1Interdisciplinary Graduate School of Engineering Sciences Kyushu University Kasuga Fukuoka Japan Jun 30 2015 · Microstructure oxygen environment and morphology determination for posttransition metal oxide semiconductor-based interfacial layer films. (A) Grazing incidence X-ray diffraction (GIXRD) of a-IGO and a-GZTO films as a function of composition. (B) Representative O1s XPS spectra of a-IGO and a-GZTO films as a function of composition.

DOI 10.1038/NMAT4801 Metal-Oxide-Semiconductor

Metal oxide growth 1. SiO 2 SiO 2 thin films were grown by three methods. First high quality thermal SiO 2 films were grown at 950 oC in an oxidation furnace (MRL 8 furnace Thermal Process Inc ) in dry O 2 ambient. This method has been widely used to fabricate gate oxides in MOSFET s with good interfacial quality and low defect Interfacial Electronic Characterization of Oxides/Metals on High Mobility Semiconductors Using in-situ Synchrotron Radiation Photoemission and the Correlation with the Interfacial Electric Properties K. Y. Lin Y. H. Lin L. B. Young H. W. Wan and Minghwei Hong

Improved interfacial quality of GaAs metal-oxide

AbstracThe interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N2 −/NH3-plasma are investigated showing that lower interface-state density (1.24 1012 cm− 2 eV− 1 near midgap) smaller gate leakage current density (1.34 10− 5 A/cm2 at Jun 29 2017 · The high photovoltage was achieved by engineering the semiconductor–insulator and insulator–metal interfaces using a thin Al 2 O 3 dielectric layer to unpin the Si Fermi level and using a high

Suppression of GeOx interfacial layer and enhancement of

For high-performance nanoscale Ge-based transistors one important point of focus is interfacial germanium oxide (GeO x) which is thermodynamically unstable and easily desorbed. A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O) inert (Ar) and reducing (H2 N2) ambients at elevated temperatures from 900°C to 1300°C for 1 hour.

Metal-Semiconductor Contacts

Metal-semiconductor contacts are an obvious component of any semiconductor device. At the same time such contacts cannot be assumed to have a resistance as low as that of two connected metals. In particular a large mismatch between the Fermi energy of the metal and semiconductor can result is a high-resistance rectifying contact. mentary metal-oxide-semiconductor CMOS applications is the lack of high-quality thermodynamically stable insulators. Although in situ molecular beam expitaxy MBE Ga 2O 3 Gd 2O 3 and ex situ atomic-layer-deposited ALD Al 2O 3 show promising results 1–6 a direct ALD HfO 2 the high-k dielectric for Si CMOS at 45 nm node and beyond remains a

Metal oxide semiconducting interfacial layers for

Among the various interfacial materials used transition metal oxide semiconductors (MOS) are considered as potential candidates owing to their high environmental stability superior optical trans- parency and facile synthesis routes. Open circuit voltage V The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N 2 −/NH 3-plasma are investigated showing that lower interface-state density (1.24 10 12 cm − 2 eV − 1 near midgap) smaller gate leakage current density (1.34 10 − 5 A/cm 2 at V fb 1 V) smaller capacitance equivalent

Development of Metal-Oxide-Semiconductor (MOS)

to achieving high efficiency and good electrochemical stability is the metal-oxide-semiconductor (MOS) photoelectrode design.(1) The MOS arrangement generally consists of catalytic metal structures or collectors deposited on an oxide-covered semiconductor as illustrated in Fig. Quickly heating the hydroxide gel to 400 500℃ can be worthy of γ-Ga2O3 which has a defective spinel structure. Heating gallium nitrate at 250°C and then immersing it at about 200°C for 12 hours can produce δ-Ga2O3 which is similar to the C-structure of In2O3 Tl2O3 Mn2O3 and Ln2O3. Ε-Ga2O3 can be obtained by heating δ-Ga2O3 briefly at 550°C (about 30 minutes).

"Investigation of Gate Dielectric Materials and Dielectric

High quality HfO2 films were grown using ALD on a chemical oxide. The dependence of interfacial quality on the thickness of the chemical oxide was studied. Finally I studied growth of HfO2 on two innovative interfacial layers an interfacial layer grown by in-situ ALD ozone/water cycle exposure and an interfacial layer of etched thermal and RTP

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Interfacial layer dependence on device property of high

Interfacial layer dependence on device property of high- TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness W. B. Chen and Albert China Department of Electronics Engineering National Chiao-Tung University Hsinchu 30010 Taiwan the lack of high-quality and thermodynamically stable gate dielectrics is a major problem in implementing Ge and III–V semiconductors as the channel materials.5–10 For Ge it is diffi-cult to suppress the formation of a low-K germanium oxide (GeO x) interfacial layer (IL) at the high-K and Ge interface

Metal-Semiconductor Contacts

Metal-semiconductor contacts are an obvious component of any semiconductor device. At the same time such contacts cannot be assumed to have a resistance as low as that of two connected metals. In particular a large mismatch between the Fermi energy of the metal and semiconductor can result is a high-resistance rectifying contact. 7 Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices 175 reaction between GaAs and oxygen in the gas ambient is expected to form Ga-oxide As-oxide remaining elemental As and sometimes even a large amount of vacancies due to the high volatility of As.

Interfacial engineering of metal-insulator-semiconductor

Jun 29 2017 · The high photovoltage was achieved by engineering the semiconductor–insulator and insulator–metal interfaces using a thin Al 2 O 3 dielectric layer to unpin the Si Fermi level and using a high mentary metal-oxide-semiconductor CMOS applications is the lack of high-quality thermodynamically stable insulators. Although in situ molecular beam expitaxy MBE Ga 2O 3 Gd 2O 3 and ex situ atomic-layer-deposited ALD Al 2O 3 show promising results 1–6 a direct ALD HfO 2 the high-k dielectric for Si CMOS at 45 nm node and beyond remains a

High-quality semiconductor material-gallium oxide

Quickly heating the hydroxide gel to 400 500℃ can be worthy of γ-Ga2O3 which has a defective spinel structure. Heating gallium nitrate at 250°C and then immersing it at about 200°C for 12 hours can produce δ-Ga2O3 which is similar to the C-structure of In2O3 Tl2O3 Mn2O3 and Ln2O3. Ε-Ga2O3 can be obtained by heating δ-Ga2O3 briefly at 550°C (about 30 minutes). Among the various interfacial materials used transition metal oxide semiconductors (MOS) are considered as potential candidates owing to their high environmental stability superior optical transparency and facile synthesis routes.

GaAs metal-oxide-semiconductor capacitors using atomic

high-frequency C-V curves shown in Fig. 4 a .According to the cross-sectional HRTEM micrograph shown in Fig. 2 a 7 Å thick interfacial layer is discernible between HfO 2 and TaN metal gate. As a result the presence of this undesirable interfacial layer Interfacial layer dependence on device property of high- TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness W. B. Chen and Albert China Department of Electronics Engineering National Chiao-Tung University Hsinchu 30010 Taiwan

Metal oxide semiconducting interfacial layers for

Among the various interfacial materials used transition metal oxide semiconductors (MOS) are considered as potential candidates owing to their high environmental stability superior optical transparency and facile synthesis routes. ABSTRACT Germanium (Ge)-based metal−oxide−semi-conductor field-effect transistors are a promising candidate for high performance low power electronics at the 7 nm technology node and beyond. However the availability of high quality gate oxide/Ge interfaces that provide low leakage current density and equivalent oxide thickness (EOT

Enhanced Interfacial Integrity of Amorphous Oxide Thin

Low-temperature solution-processed oxide semiconductor and dielectric films typically possess a substantial number of defects and impurities due to incomplete metal–oxygen bond formation causing poor electrical performance and stability. Here we exploit a facile route to improve the film quality and the interfacial property of low-temperature solution-processed oxide thin films via Low-temperature solution-processed oxide semiconductor and dielectric films typically possess a substantial number of defects and impurities due to incomplete metal–oxygen bond formation causing poor electrical performance and stability. Here we exploit a facile route to improve the film quality and the interfacial property of low-temperature solution-processed oxide thin films via

DOI 10.1038/NMAT4801 Metal-Oxide-Semiconductor

Metal oxide growth 1. SiO 2 SiO 2 thin films were grown by three methods. First high quality thermal SiO 2 films were grown at 950 oC in an oxidation furnace (MRL 8 furnace Thermal Process Inc ) in dry O 2 ambient. This method has been widely used to fabricate gate oxides in MOSFET s with good interfacial quality and low defect High quality HfO2 films were grown using ALD on a chemical oxide. The dependence of interfacial quality on the thickness of the chemical oxide was studied. Finally I studied growth of HfO2 on two innovative interfacial layers an interfacial layer grown by in-situ ALD ozone/water cycle exposure and an interfacial layer of etched thermal and RTP